Mimix Broadband, Inc. introduced earlier this month, a new line of Ka-band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) products. The products include power amplifiers and a frequency doubler, covering 27 to 34 GHz frequency bands, with the 30SPA0536 device achieving 36 dBm Psat. Power Amplifiers Achieve 1, 2 and 4-watts Psat; Use Doubler with Amplifiers to Simplify System Design Using 0.15 micron gate length GaAs pHEMT device model technology, the new power amplifiers and doubler achieve the following performance levels: Part#30SPA0536 Frequency (GHz):27.0-33.0  Gain (db):21 +/- 1.0 Output Psat (dBm):36 Bias (mA@V):2.1 A @ 5.0 Part#:30MPA0562 Frequency (GHz):28.0-31.0  Gain (db):27+/- 1.0 Output Psat (dBm):30 Bias (mA@V):420 @ 5.0 Part# 30SPA0557 Frequency: 27.0-32.0  Gain (db): 21 +/- 1.0 Output Psat: 34 Bias (mA@V):1.1 A @ 5.0 Part #30DBL0537 RF In (GHz):14.5-17.0 RF Out (GHz): 29.0-34.0 Pin (dBm):2 Pout (dBm):20 Bias (mA@V):190@5.0 The 30DBL0537 used in conjunction with the 30SPA0536 provides a highly integrated uplinks for commercial and defense applications, eliminating the need for a more complex heterodyne up-converter system design. The new amplifiers and doublers are well suited for wireless communications applications, such as millimeter-wave point-to-point radio, LMDS, Satcom and VSAT applications. “These parts provide ‘state-of-the-art’ power levels at the Ka-band frequencies used for satellite uplinks, with good PAE and match, and exceptionally good lifetime, in 4-mil substrate thickness that facilitates handling at the die level,” stated Dr. Jim Harvey, CTO of Mimix Broadband, Inc. “In addition to providing these parts as die, Mimix is developing a range of packaged versions to facilitate low cost manufacture of Ka-band up-converters.” Mimix performs 100% on-wafer RF, DC and output power testing on these products, as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.